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For thin film solar cells, it has been reported that using hydrogenated amorphous silicon oxide in absorber layer (with low oxygen concentration) could generate more electricity than hydrogenated amorphous silicon layers in short wavelengths due to wide band gap (Eg). This work is concerned about the analysis of all p-i-n amorphous silicon oxide based solar cell by numerical simulation. The calculation was carried out by using Analysis of Mi- croelectronic and Photonic Structures (AMPS-1D) simulator. We optimized hydrogenated amorphous silicon oxide (a-SiOx: H) as an active layer in the hydrogenated amorphous silicon oxide (a-SiOx: H) p-i-n single junction solar cell. We have achieved a power conversionefficiency of 5.716 %. Also, a good agreement between our simulated results and experimental results was obtained.
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