Simulation study of an all p-i-n amorphous silicon oxide solar cell

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Wafa Hadj Kouider Abbas Belfar Houcine Ait-kaci


For thin film solar cells, it has been reported that using hydrogenated amorphous silicon oxide in absorber layer (with low oxygen concentration) could generate more electricity than hydrogenated amorphous silicon layers in short wavelengths due to wide band gap (Eg). This work is concerned about the analysis of all p-i-n amorphous silicon oxide based solar cell by numerical simulation. The calculation was carried out by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator. We optimized hydrogenated amorphous silicon oxide (a-SiOx: H) as an active layer in the hydrogenated amorphous silicon oxide (a-SiOx: H) p-i-n single junction solar cell. We have achieved a power conversion efficiency of 5.716 %. Also, a good agreement between our simulated results and experimental results was obtained.

Keywords: Thin film; Solar cell; Amorphous silicon oxide; AMPS-1D; simulation.

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How to Cite
Hadj Kouider, W.; Belfar, A.; Ait-kaci, H. Simulation Study of an All P-I-N Amorphous Silicon Oxide Solar Cell. Materials and Biomaterials Science 2019, 3, 015–018.
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